PART |
Description |
Maker |
ECH8668 |
Power MOSFET, 20V, 7.5A, 17mOhm, -20V, -5A, 38mOhm, Complementary Dual ECH8
|
ON Semiconductor
|
2SC4836 2SC4836F |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|叩| 20V的五(巴西)总裁| 5A条一(c)|园区 20V/5A Switch Applications
|
STMicroelectronics N.V. SANYO[Sanyo Semicon Device]
|
CDBK0520L |
Small Signal Schottky Diodes, V-RRM=20V, V-R=20V, I-O=500mA SMD Schottky Barrier Diode
|
Comchip Technology
|
IRF7301 IRF7301TR |
FERRITE BEAD BLM21A601S Power MOSFET(Vdss=20V Rds(on)=0.050ohm) Power MOSFET(Vdss=20V, Rds(on)=0.050ohm) 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
IRLR3715 IRLU3715 IRLR3715TRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 54A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 20V的五(巴西)直| 54A条(丁)|52AA SMPS MOSFET 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRF7460 IRF7460TR IRF7460TRPBF |
12 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Power MOSFET(Vdss=20V/ Id=12A) Power MOSFET(Vdss=20V, Id=12A) 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
KI6968BEDQ |
Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
AH172 AH172-WA AH172-WAA AH172-WAB AH172-WLA AH172 |
V(cc): 20V; V out(off): 20V; I(s): 20mA; imternal pull-up hall effect latch. For rotor position sensing, current switch, encoder, RPM detection Internal Pull-up Hall Effect Latch 内部上拉霍尔效应锁存
|
Anachip Corp Intel, Corp.
|
FDFMA2P029Z08 FDFMA2P029Z |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.1A, 95m Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.1A, 95m Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.1A, 95m
|
Fairchild Semiconductor
|
IRF7459 IRF7459TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A) 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 12A条)
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package Power MOSFET(Vdss=20V, Rds(on)=0.035ohm) Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm) N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的(不适用沟道的HEXFET功率马鞍山场效应管) N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|